Cathodoluminescence Study of Micro-crack-induced Stress Relief for AlN Films on Si(111)
نویسندگان
چکیده
1.—Department of Physics, The Ilse Katz Center for Nano and Meso Scale Science and Technology, Ben-Gurion University of the Negev, P.O. Box 653, Beer-Sheva 84105, Israel. 2.—Department of Electrical Engineering, Solid State Institute and Microelectronic Center, Technion, Haifa 32000, Israel. 3.—Department of Materials Engineering, The Ilse Katz Center for Nano and Meso Scale Science and Technology, Ben-Gurion University of the Negev, P.O.B 653, Beer-Sheva 84105, Israel. 4.—E-mail: [email protected]
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Microcrack-induced strain relief in GaN/AlN quantum dots grown on Si(111)
The optical properties of vertically stacked self-assembled GaN/AlN quantum dots QD’s grown on Si substrates were studied by means of temporally and spatially resolved cathodoluminescence CL . An analysis of the CL spectra, thermal activation energies, and measured decay times of the QD luminescence was performed near stress-induced microcracks, revealing changes in the optical properties that ...
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